Dr. Albo Asaf

Dr.
Albo Asaf
Telephone: 
Office: 

Publications

Refereed papers in professional journals

  1. "Two-well terahertz quantum cascade lasers with suppressed carrier leakage", Asaf Albo, Yuri V. Flores, Qing Hu and John L. Reno, Appl. Phys. Lett. 111, 111107, 2017.

  2. "Carrier Leakage Dynamics in Terahertz Quantum Cascade Lasers", Asaf Albo and Yuri V. Flores, IEEE Journal of Quantum Electronics 53(1), 2300105, 2017.

  3. "Impact of interface roughness on the performance of GaAs/AlxGa1-xAs terahertz-emitting quantum cascade lasers", Yuri V. Flores and A. Albo, Journal of Quantum Electronics 53(3), 1-8, 2017.

  4. "Temperature driven enhancement of the stimulated emission rate in terahertz quantum cascade lasers", Asaf Albo and Yuri V. Flores, Journal of Quantum Electronics 53(1), 1-5, 2017.

  5. "Oscillator strength-lifetime trade-offs in terahertz quantum cascade lasers", Chun Wang I Chan, Asaf Albo, Qing Hu and John L. Reno, Appl. Phys. Lett. 109, 201104, 2016.

  6. "Room temperature negative differential resistance in terahertz quantum cascade laser structures", Asaf Albo, Qing Hu and John L. Reno, Appl. Phys. Lett. 109, 081102, 2016.

  7. "Carrier leakage into the continuum in diagonal GaAs/Al0.15GaAs terahertz quantum cascade lasers", Asaf Albo and Qing Hu, Appl. Phys. Lett. 107, 241101, 2015.

  8. "Investigating temperature degradation in THz quantum cascade lasers by examination of temperature dependence of output power", Asaf Albo and Qing Hu, Appl. Phys. Lett. 106, 131108, 2015.

  9. "Photocurrent spectroscopy of intersubband bound to bound-state-in-the-continuum transitions in GaInAsN/(Al)GaAs quantum-well-infrared-photodetectors" Asaf Albo, Dan Fekete, and Gad Bahir,  J. Appl. Phys. 112, 084502, 2012.

  10. "Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells", Asaf Albo, Dan Fekete, and Gad Bahir, Phys. Rev. B. 85, 115307, 2012.

  11. "Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers", Asaf Albo, Gad Bahir, and Dan Fekete, J. Appl. Phys. 108, 093116, 2010.

  12. "Utilizing interface adsorption of nitrogen for the growth of GaInAsN by metal organic chemical vapor deposition for NIR applications", Asaf Albo, Catherine Cytermann, Gad Bahir, and Dan Fekete, Appl. Phys. Lett. 96, 141102, 2010.

  13. "Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition", Asaf Albo, Catherine Cytermann, Gad Bahir, and Dan Fekete, Appl. Phys. Lett. 95, 051102, 2009.

  14. "Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 µm", Asaf Albo, Alon Vardi, Dan Fekete, and Gad Bahir, Appl. Phys. Lett.  94, 093503, 2009.

  15. "Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector", Asaf Albo, Dan Fekete, and Gad Bahir, Physica Status Solidi (c)5, 2008, 6, 2323-2325.

  16. "Stable blue emission from a polyfluorene/layered-compound guest/host nanocomposite", Eyal Aharon, Asaf Albo, Michael Kalina, and Gitti L. Frey, Adv. Funct. Mater. 2006, 16, 980–986.

 

Research

  • Quantum Engineering & Devices 

  • Thermophotonic Devices

  • Novel Optoelectronic Materials & Devices

  • Transport in Nanostructures

  • Semiconductor Hetrostructures

  • Terahertz Quantum Cascade Lasers