MoS2-Based Diodes

19/07/2017 - 17:00 - 18:00

From the invention of the first transistor and following Moore's law, the minimization  of transistors became one of the main goals of the semiconductor industry. Graphene and other 2D materials show a great potential of preserving Moore's law due to their unique properties. With the discovery of graphene and the implementation of new production methods (starting in 2004), a complete new class of 2D materials were discovered and are currently under extensive investigation. This class of materials has opened new technological possibilities stemming from the rich physics of these two-dimensional materials. The advantage of two-dimensional materials over one-dimensional materials in their use in next-generation nanoelectronic devices is due to the relatively easy ability to fabricate complex structures from them. Today, the most studied two-dimensional material is still graphene, due to its high mobility and transparency to wide range of the optical spectrum. However, pristine graphene does not have a bandgap - a property that is essential for many devices including diodes and transistors. More recently, the emergence of 2D semiconductors (e.g., transition metal dichalcogenides), has attracted significant interest and holds great potential for many applications. Possessing a wide, direct bandgap in single layer that makes it suitable for use in electronic and optoelectronic technologies. Single layers of MoS2 feature a bandgap of 1.89 eV and exhibit unique physical, optical and electrical properties. Together with its atomic thickness (~0.7nm) it serves as an almost perfect semiconductor for low-power electronics, due to a complete depletion of MOSFET devices with leakage currents on the order of pA, even at short channel devices. In this thesis fabricated an advanced diode with high photoconductive gain thank to the material feature

*This work was carried out toward M.Sc degree in the Faculty of Engineering, Bar-Ilan University with the supervision of of Dr. Doron Naveh

Omry Cohen
BIU Engineering Building 1103, Room 329