Advanced microelectronic readout chips for silicon radiation detectors in scientific applications
The seminar will give an overview of the technologies and of the design solutions that are being developed at the University of Bergamo in the field of mixed-signal microelectronic readout systems for modern pixel detectors. Silicon sensors are an essential tool for breakthrough discoveries in a large variety of scientific fields, among which high-energy physics at particle accelerators and X-ray imaging at synchrotrons and free-electron lasers. Microelectronics plays an essential role in defining the performance of radiation sensors, especially in very advanced detection systems where the sensors have to be very finely segmented in small pixels to achieve the required measurement resolution. In scientific experiments at advanced facilities, sensors and readout electronics often have to operate in an extreme radiation environment, preserving their capability to handle extremely high data rates and to operate with a high signal-to-noise ratio. The seminar will present the R&D projects at the University of Bergamo concerning mixed-signal integrated circuits for the readout of pixel sensors at the Large Hadron Collider at CERN and the European XFEL in Hamburg, with a discussion of the novel signal processing techniques that allow these systems to achieve an unprecedented performance. The seminar will also discuss the mechanisms underlying radiation damage effects and the radiation hardness design criteria that were adopted in these CMOS chips. Prospects are given for upcoming projects aiming to design new microelectronic front-end circuits in very advanced CMOS nodes as well as to develop fine-pitch monolithic CMOS sensors.