Gain-Cell embedded DRAM: An alternative option for embedded memories

Memory is probably the single most important component in today's computing systems. While capacity is achieved by integrating external memory technologies, such as SSDs and DRAM, into a system - truly fast access and low energy storage can only be provided by on-chip (embedded) memories. To that end, SRAM is the unequivocal leader, often driving technology process development, dominating die area, limiting voltage scaling, and sometimes dominating power consumption. In this tutorial, I will introduce the subject of embedded memories, briefly overviewing their characteristics, advantages and limitations. I will then traverse into an interesting alternative to traditional SRAM, better known as Gain-Cell embedded DRAM (GC-eDRAM). The discussion of GC-eDRAM will include its advantages over traditional SRAM, its operating principles and characteristics, and ultimately, its limitations. This will lead into the introduction of a wide range of studies about GC-eDRAM, exploring these advantages and limitations and proposing methods to overcome the limitations and application specific solutions to exploit the unique characteristics of GC-eDRAM.