Dr. Asaf Albo

טלפון
דוא"ל
asaf.albo@biu.ac.il
משרד
Bldg. 1102 floor 4, room 414
שעות קבלה
By appointment via email
    מחקר
    • Quantum Engineering & Devices 
    • Thermophotonic Devices
    • Novel Optoelectronic Materials & Devices
    • Transport in Nanostructures
    • Semiconductor Hetrostructures
    • Terahertz Quantum Cascade Lasers

     

    פרסומים

    Papers

    1. "The Response of Split-Well Direct-Phonon THz Quantum-Cascade Laser Structures to Changes in Doping", Nathalie Lander Gower, Silvia Piperno, Asaf Albo, 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2022, pp. 1-2, doi: 10.1109/IRMMW-THz50927.2022.9895500.
    2. "Chemical Vapor Deposition of Spherical Amorphous Selenium Mie Resonators for Infrared Meta-Optics", Danveer Singh, Michal Poplinger, Avraham Twitto, Rafi Snitkoff, Pilkhaz Nanikashvili, Ori Azolay, Adi Levi, Chen Stern, Gili Cohen Taguri, Asaf Albo, Doron Naveh, Tomer Lewi, ACS Appl. Mater. Interfaces 14(3), 4612, 2022.
    3. "Comparison of THz-QCLs designs supporting clean-n-level systems", Nathalie Lander Gower, Silvia Piperno, Asaf Albo, Photonics 8(7), 248, 2021.
    4. "The effect of doping in split-well direct-phonon THz quantum-cascade laser structures", Nathalie Lander Gower, Silvia Piperno, Asaf Albo, Photonics 8(6), 195, 2021.
    5. "Self-consistent gain calculations and carrier transport analysis for split-well direct-phonon terahertz quantum cascade lasers", Nathalie Lander Gower, Silvia Piperno, Asaf Albo, AIP Advances 10(11), 115319, 2020.
    6. "The Significance of Carrier Leakage for Stable Lasing in Split-Well Direct Phonon Terahertz Quantum Cascade Lasers", Nathalie Lander Gower, Silvia Piperno, Asaf Albo, Photonics 7(3), 59, 2020.
    7. "Split-well direct-phonon terahertz quantum cascade lasers", Asaf Albo, Yuri V. Flores, Qing Hu and John L. Reno, Appl. Phys. Lett. 114, 191102, 2019.
    8. "The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection", Asaf Albo Dan Fekete, Gad Bahir, Infrared Physics & Technology 96, 68, 2019.
    9. "Two-well terahertz quantum cascade lasers with suppressed carrier leakage", Asaf Albo, Yuri V. Flores, Qing Hu and John L. Reno, Appl. Phys. Lett. 111, 111107, 2017.
    10. "Carrier Leakage Dynamics in Terahertz Quantum Cascade Lasers", Asaf Albo and Yuri V. Flores, IEEE Journal of Quantum Electronics 53(5), 2300105, 2017.
    11. "Impact of interface roughness on the performance of GaAs/AlxGa1-xAs terahertz-emitting quantum cascade lasers", Yuri V. Flores and A. Albo, Journal of Quantum Electronics 53(3), 1-8, 2017.
    12. "Temperature driven enhancement of the stimulated emission rate in terahertz quantum cascade lasers", Asaf Albo and Yuri V. Flores, Journal of Quantum Electronics 53(1), 1-5, 2017.
    13. "Oscillator strength-lifetime trade-offs in terahertz quantum cascade lasers", Chun Wang I Chan, Asaf Albo, Qing Hu and John L. Reno, Appl. Phys. Lett. 109, 201104, 2016.
    14. "Room temperature negative differential resistance in terahertz quantum cascade laser structures", Asaf Albo, Qing Hu and John L. Reno, Appl. Phys. Lett. 109, 081102, 2016.
    15. "Carrier leakage into the continuum in diagonal GaAs/Al0.15GaAs terahertz quantum cascade lasers", Asaf Albo and Qing Hu, Appl. Phys. Lett. 107, 241101, 2015.
    16. "Investigating temperature degradation in THz quantum cascade lasers by examination of temperature dependence of output power", Asaf Albo and Qing Hu, Appl. Phys. Lett. 106, 131108, 2015.
    17. "Large format InSb infrared MTF issues with 10µm pixels", Gal Gershon, Asaf Albo, Merav Eylon et. al., Proc. Optro Conference 2931891, 2014.
    18. "Large format InSb infrared detector with 10µm pixels", Gal Gershon, Asaf Albo, Merav Eylon et. al., Proc. Optro Conference 2931891, 2014.
    19. "3 mega-pixel InSb detector with 10µm pitch", Gal Gershon, Asaf Albo, Merav Eylon et. al., Infrared Technology and Applications XXXIX 8704, 870438, 2013.
    20. "Photocurrent spectroscopy of intersubband bound to bound-state-in-the-continuum transitions in GaInAsN/(Al)GaAs quantum-well-infrared-photodetectors" Asaf Albo, Dan Fekete, and Gad Bahir, J. Appl. Phys. 112, 084502, 2012.
    21. "Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells", Asaf Albo, Dan Fekete, and Gad Bahir, Phys. Rev. B. 85, 115307, 2012.
    22. "Improved hole confinement in GaInAsN-GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers", Asaf Albo, Gad Bahir, and Dan Fekete, J. Appl. Phys. 108, 093116, 2010.
    23. "Utilizing interface adsorption of nitrogen for the growth of GaInAsN by metal organic chemical vapor deposition for NIR applications", Asaf Albo, Catherine Cytermann, Gad Bahir, and Dan Fekete, Appl. Phys. Lett. 96, 141102, 2010.
    24. "Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition", Asaf Albo, Catherine Cytermann,Gad Bahir, and Dan Fekete, Appl. Phys. Lett. 95, 051102, 2009.
    25. "Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 µm", Asaf Albo, Alon Vardi, Dan Fekete, and Gad Bahir, Appl. Phys. Lett.  94, 093503, 2009.
    26. "Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector", Asaf Albo, Dan Fekete, and Gad Bahir, Physica Status Solidi (c)5, 2008, 6, 2323-2325.
    27. "Stable blue emission from a polyfluorene/layered-compound guest/host nanocomposite", Eyal Aharon, Asaf Albo, Michael Kalina, and Gitti L. Frey, Adv. Funct. Mater. 2006, 16, 980–986.

    Patents

    1. "Methods and system for detecting light and designing light detector", Asaf Albo, Dan Fekete, and Gad Bahir, US Patent 9,450,001, 2016.
    2. "Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof ", Asaf Albo, Gad Bahir, and Dan Fekete, US Patent 8,513,644 B2, 2013.
    3. "Methods and system for detecting light having a light absorbing layer with bandgap modifying atoms", Gad Bahir, Dan Fekete, Asaf Albo, US Patent.8,492,702 B2, 2013.
    4. "Light emitting system and method of fabricating and using the same", Gad Bahir, Dan Fekete, Asaf Albo, US Patent. 8,367,450 B2, 2013.
    5. "Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof", Asaf Albo, Gad Bahir, Dan Fekete, US Patent. 8,293,628, 2012.

    Theses Books

    1. “GaInAsN/(Al)GaAs quantum-well-based structures: growth, physical properties, and IR-devices”; research thesis, submitted in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Electrical Engineering, The Technion – Israel Institute of Technology, (2011).
    2. "Novel conjugated polymers/Inorganic guest-host nanocomposites for blue-emitting devices"; research thesis, submitted in partial fulfilment of the requirements for the degree of Master of Science in Materials Engineering, The Technion – Israel Institute of Technology, (2005).

    Last Updated Date : 23/04/2023