20/08/2018 - 13:30 - 12:30
Add To Calendar
2018-08-20 12:30:00
2018-08-20 13:30:00
Plasma dispersion effect based super-resolved imaging in silicon
We suggest using a bare silicon slab as medium for manipulating and controlling the shape of the IR beam, as part of the modulation process. As the IR beam can be attenuated, it can be shaped by attenuating parts of it. Inspired by the stimulated emission depletion (STED) method, our method is termed silicon photonics STED. Instead of stimulated depletion of fluorescence used in the STED method, our method utilizes the FCCs to shape the size of the beam. Thus, the beam minimal diameter can be decreased below the diffraction limit of the wavelength. This method can then be used as bulk defects detection is silicon or as a failure analysis method in silicon ICs.
* Ph.D. research supervised by Prof. Moshe Sinvani and Prof. Zeev Zalevsky
מרצהHadar Pinhas, Faculty of Engineering, Bar-Ilan University
BIU Engineering Building 1103, Room 329
הפקולטה להנדסה
Engineering.Faculty@mail.biu.ac.il
Asia/Jerusalem
public
Location
BIU Engineering Building 1103, Room 329
We suggest using a bare silicon slab as medium for manipulating and controlling the shape of the IR beam, as part of the modulation process. As the IR beam can be attenuated, it can be shaped by attenuating parts of it. Inspired by the stimulated emission depletion (STED) method, our method is termed silicon photonics STED. Instead of stimulated depletion of fluorescence used in the STED method, our method utilizes the FCCs to shape the size of the beam. Thus, the beam minimal diameter can be decreased below the diffraction limit of the wavelength. This method can then be used as bulk defects detection is silicon or as a failure analysis method in silicon ICs.
* Ph.D. research supervised by Prof. Moshe Sinvani and Prof. Zeev Zalevsky
מרצה
Hadar Pinhas, Faculty of Engineering, Bar-Ilan University
