Improving data integrity in embedded memories by applying algorithmic/statistical methods

הרקע לפרויקט:

Gain-cell embedded DRAM (GC-eDRAM) is a memory technology that has been shown to be an interesting alternative to standard SRAM for various applications. One of the drawbacks of this technology is the limited data retention time (DRT) due to parasitic leakage currents.

מטרת הפרויקט:

In this project, the students will model the probability of cell failures and explore the possibilities of improving the DRT through algorithmic approaches mixed with circuit design techniques.

תכולת הפרויקט:

The project is a research project with both theoretical and implementation components, intended for both Electrical and Computer Engineering students.

קורסי קדם:

מעגלים משולבים ספרתיים 83-313

דרישות נוספות:

Verilog/Virtuoso/Matlab/C/Python

מקורות:

1. P. Meinerzhagen, A. Teman, R. Giterman, N. Edri, A. Burg, and A. Fish, Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip. Berlin, Germany: Springer, 2018.
2. Teman A, Meinerzhagen P, Burg A, Fish A (2012) Review and classification of gain cell eDRAM implementations. In: Proc. IEEE Convention of Electrical and Electronics Engineers in Israel (IEEEI), pp 1–5