Measurement and design of gain cell dynamic memories

הרקע לפרויקט:

Gain cell memories are a type of embedded DRAM memories compatible with cmos logic. They are a good candidate to replace SRAM as the low levels of cache. In this project we will work on designing a new type of GC and measuring existing hardware that contain gain cells.

מטרת הפרויקט:

The results from this project are measurement and simulation results of memory cells from different types.

תכולת הפרויקט:

The students will need to design, simulate gain cells of different types and measure existing solutions.

קורסי קדם:

מעגלים משולבים

מקורות:

Garzon, E., Greenblatt, Y., Harel, O., Lanuzza, M., & Teman, A. (2021). Gain-Cell Embedded DRAM Under Cryogenic Operation-A First Study. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 29(7), 1319–1324. https://doi.org/10.1109/TVLSI.2021.3081043 https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=9442391&casa_token…