Development of a "Bragg Modulator" in a Single Silicon Wave-Guide

In this paper we present the development of an electro optical "Bragg" modulator for telecommunication, in both design and fabrication. The device consists from a regular single mode silicon waveguide (WG) in which an effective Bragg reflector is "turned on" within the WG by means of external bias, due to the plasma dispersion effect, in which the (complexed) refractive index is affected by carrier concentration within the Silicon. Three different strategies are presented for both design and fabrication.

 * This work was carried out towards the M.Sc. degree in the Faculty of Engineering, Bar-Ilan University, under the supervision of Prof. Zeev Zalevsky.